器件名称: IXTM11N80
功能描述: MegaMOSFET
文件大小: 98.75KB 共4页
简 介:VDSS
I D25
RDS(on)
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
11 A 0.95 13 A 0.80
Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ T JM Tstg Md Weight
Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 11N80 13N80 11N80 13N80
Maximum Ratings 800 800 ±20 ±30 11 13 44 52 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G G = Gate, S = Source, D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Features
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±100 TJ = 25°C TJ = 125°C 11N80 13N80 250 1 0.95 0.80 V V nA A mA
Applications
q
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V DSS V GS(th) I GSS I DSS R DS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 A VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 s,
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Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
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q q
Easy to mount with 1 screw (TO-247) (isolated mounting scre……