器件名称: IXTK74N20
功能描述: High Current MegaMOSFET
文件大小: 320.44KB 共2页
简 介:High Current MegaMOSTMFET
N-Channel Enhancement Mode
VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V
ID25
RDS(on)
74 A 35 mW 68 A 35 mW
Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 TO-247 Test conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 74N20 68N20 74N20 68N20 74N20 68N20 Maximum ratings 200 200 ±20 ±30 74 68 296 272 416 300 150 -55 ... +150 1.13/10 10 6 300 V V V V A A A A W W °C °C °C Nm/lb.in. g g °C
G = Gate S = Source
G D S
TO-247AD (IXTH)
TJ = 25°C to 150°C; RGS = 1.0 M
D (TAB)
TO-264 AA (IXTK)
D (TAB)
-55 ... +150
D = Drain Tab = Drain
Features Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times
Symbol
Test Conditions
Characteristic Values Min. Typ. 200 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 500 3 35 Max. V V nA A mA m
(TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 5 mA VDS = VGS, ID = 4 mA VGS = ±20 V DC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
Applications Motor controls DC choppers Uninterruptable Power Supplies (UPS) Switch-mode and resonant-mode
Advantages Easy to mount with one screw (isolated mounting screw hole) Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
IXYS reserves the right to change limits, t……
