器件名称: IXTK62N25
功能描述: High Current MegaMOSFET
文件大小: 85.58KB 共2页
简 介:Advance Technical Information
High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 62N25
VDSS ID25
RDS(on)
= 250 V = 62 A = 35 m
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 TC = 25°C
Maximum ratings 250 250 ±20 ±30 62 248 62 45 1.5 5 390 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g Features
G D S
TO-264 AA (IXTK)
D (TAB)
G = Gate S = Source
D = Drain Tab = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
300 0.7/6 10
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times
Applications
Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS = VGS, ID = 250 A V GS = ±20 V DC, VDS = 0 V DS = VDSS V GS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 250 2.0 4.0 ±100 V V nA
Motor controls DC choppers Switched-mode power supplies
Advantages
50 A 2 mA 35 m
Easy to mount with one screw (isolated mounting screw hole) Space savings High power density
V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
2002 IXYS All rights reserved
98877A (02/02)
IXTK 62N25
Symbol Test Conditio……
