器件名称: IXTK33N50
功能描述: High Current MegaMOSFET
文件大小: 85.35KB 共4页
简 介:High Current MegaMOSTMFET
N-Channel Enhancement Mode
Preliminary data
IXTK 33N50
VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17
Symbol VDSS VDGR VGS VGSM ID25 IDM PD T T
J
Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 M Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM T C = 25°C
Maximum ratings 500 500 ±20 ±30 33 132 416 -55 ... +150 150 -55 ... +150 V V V V
TO-264 AA
G
D (TAB)
D S
A A W °C °C °C
G = Gate S = Source
D = Drain TAB = Drain
TJM
stg
Md Weight
Mounting torque
1.13/10 Nm/lb.in. 10 300 g °C Features Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Applications Motor controls DC choppers Uninterruptable Power Supplies (UPS) Switch-mode and resonant-mode Advantages Easy to mount with one screw (isolated mounting screw hole) Space savings High power density
Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values Min. 500 0.087 2.0 -0.25 ±100 TJ = 25°C TJ = 125°C 200 3 0.17 4.0 Typ. Max. V %/K V %/K nA A mA
(T J = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 5 mA BVDSS temperature coefficient VDS = VGS, ID = 250 A VGS(th) temperature coefficient VGS = ±20 V DC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
IXYS reserves the right to change limits, test conditions, and dimensions.
95513C (4/97)
2000 IXYS All rights re……
