器件名称: IXTK200N10P
功能描述: PolarHTTM Power MOSFET
文件大小: 564.92KB 共5页
简 介:Advanced Technical Information
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTK 200N10P
VDSS ID25
RDS(on)
= 100 V = 200 A = 7.5 m
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M
Maximum Ratings 100 100 ± 20 V V V A A A A mJ J V/ns W °C °C °C °C
TO-264(SP) (IXTK)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 TC = 25°C
200 75 400 60 100 4 10 800 -55 ... +175 175 -55 ... +150
G
D
(TAB) S
G = Gate S = Source
D = Drain TAB = Drain
Features
z z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s Mounting torque 10
300
1.13/10 Nm/lb.in. g
Advantages
z z z
Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C
Characteristic Values Min. Typ. Max. 100 2.5 5.0 ±200 25 250 7.5 5.5 V V nA A A m m
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99186(05/04)
2004 IXYS All rights reserved
IXTK 200N10P
Symbol Te……