器件名称: IXSK80N60B
功能描述: High Current IGBT Short Circuit SOA Capability
文件大小: 46.76KB 共2页
简 介:High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B IXSX 80N60B
VCES IC25
VCE(sat)
= 600 V = 160 A = 2.5 V
Symbol VCES VCGR VCES VGEM IC25 IC90 IL(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC TC TC TC = = = = 25°C 90°C 90°C 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability)
Maximum Ratings 600 600 ± 20 ± 30 160 80 75 300 ICM = 160 @ 0.8 VCES 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A A A s W °C °C °C °C
PLUS 247TM (IXSX)
G
(TAB) C E
TO-264 AA (IXSK)
VGE = 15 V, TVJ = 125°C, RG = 5 Clamped inductive load VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 5 , non-repetitive TC = 25°C
G C E
(TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
300
0.4/6 Nm/lb.in. 6 10 g g
Features ! International standard packages ! Very high current, fast switching IGBT ! Low VCE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Applications ! AC motor speed control ! DC servo and robot drives ! DC choppers ! Uninterruptible power supplies (UPS) ! Switch-mode and resonant-mode power supplies Advantages ! PLUS 247TM package for clip or spring mounting ! Space savings ! High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 8……
