器件名称: IXSK35N120AU1
功能描述: High Voltage IGBT with Diode
文件大小: 40.59KB 共2页
简 介:High Voltage IGBT with Diode
Combi Pack Short Circuit SOA Capability
IXSK35N120AU1 VCES
IC25 VCE(sat)
= 1200 V = 70 A = 4V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 1200 1200 ±20 ±30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 190 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W W °C °C °C °C Nm/lb.in. g
TO-264 AA
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features International standard package JEDEC TO-264 AA High frequency IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
1.6 mm (0.063 in) from case for 10 s Mounting torque
300 1.15/13 10
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25°C TJ = 125°C 8 750 15 ±100 4 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 5 mA, VGE = 0 V = 4 mA, VCE = VGE
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