器件名称: IXSK30N60CD1
功能描述: Short Circuit SOA Capability
文件大小: 72.89KB 共2页
简 介:High Speed IGBT with Diode
IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1
Short Circuit SOA Capability
Preliminary data
VCES IC25 VCE(sat) t fi
TO-247AD (IXSH)
= = = =
600 V 55 A 2.5 V 70 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C
Maximum Ratings
G
600 600 ±20 ±30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ... +150
V V V V A A A A ms W °C °C °C TO-264 (IXSK)
C
E
TO-268 (D3) (IXST)
C G E
G
C
E C = Collector TAB = Collector
G = Gate E = Emitter
Features International standard packages: JEDEC TO-247, TO-264& TO-268 Short Circuit SOA capability High freqeuncy IGBT and antiparallel FRED in one package New generation HDMOSTM process Applications
Mounting torque
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 200 3 ±100 IC = IC90 2.5 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750 mA, VGE = 0 V = 2.5 mA, VCE = VGE
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