器件名称: IXSH50N60B
功能描述: Short Circuit SOA Capability
文件大小: 75.21KB 共4页
简 介:IGBT High Speed
Short Circuit SOA Capability
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IXSH 50N60B
V`bp I`OR V`bE~íF
= 600 V = 75 A = 2.5 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Clamped inductive load, L = 30 H VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 , non repetitive TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 50 200 ICM = 100 @ 0.8 VCES 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD
G
`=Eq^_F C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features s W °C °C °C International standard package JEDEC TO-247 AD, and TO-247 SMD for surface mount Guaranteed Short Circuit SOA capability High frequency IGBT Latest generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications
Mounting torque
1.13/10 Nm/lb.in. TO-247 SMD TO-247 4 6 300 g g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 8 200 1 ±100 2.2 2.5 V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 4 mA, VCE = VGE
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