器件名称: IXSH35N120B
功能描述: IGBT
文件大小: 82.36KB 共2页
简 介:IGBT
IXSH 35N120B IXST 35N120B
"S" Series - Improved SCSOA Capability
IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 Clamped inductive load
Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A s W °C °C °C °C g g
TO-247 AD (IXSH)
(TAB)
G C E
TO-268 ( IXST)
G E
(TAB) C = Collector TAB = Collector
TJ = 125°C, VCE = 720 V; VGE = 15 V, RG = 22 TC = 25°C
G = Gate E = Emitter
Features
l
Mounting torque
(TO-247)
1.13/10 Nm/lb.in. 300
l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268
Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity
6 4
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 3 TJ = 25°C TJ = 125°C 6 50 2.5 ±100 TJ = 25°C TJ = 125°C 3.6 2.9 V V A mA nA V V
AC motor speed control DC servo and robot drives Uninterruptible power supplies (UPS) Switched-mode and resonant-mode
power supplies DC choppers
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 1.0 mA, VGE = 0 V = 250 A, VCE = VGE
VCE = 0.8 VCES Note 1 VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Note 2
2002 IXYS All rights reserved
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