器件名称: IXSH30N60AU1
功能描述: Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Comb
文件大小: 82.71KB 共6页
简 介:VCES Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability IXSH 30 N60U1 IXSH 30 N60AU1 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 33 W Clamped inductive load, L = 100 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C
Maximum Ratings 600 600 ±20 ±30 50 30 100 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features ms W °C °C °C International standard package JEDEC TO-247 AD High frequency IGBT with guaranteed Short Circuit SOA capability IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Applications
Mounting torque
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 5 TJ = 25°C TJ = 125°C 8 500 8 ±100 30N60U1 30N60AU1 2.5 3.0 V V mA mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750 mA, VGE = 0 V = 2.5 mA, VCE = VGE
AC motor speed control DC servo and robot drives DC chopper……
