器件名称: IXSH25N120AU1
功能描述: IGBT with Diode
文件大小: 36.12KB 共2页
简 介:IGBT with Diode
IXSH25N120AU1
"S" Series - Improved SCSOA Capability
C G
IC25 = 50 A VCES = 1200 V VCE(sat) = 4.0 V
E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc PC TJ TJM TSTG Md Weight Max. Lead Temperature for Soldering (1.6mm from case for 10s) Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 33 W Clamped inductive load, L = 100 H TJ = 125C, VCE = 720 V; VGE = 15V, RG = 33W TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 50 25 80 ICM = 50 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 s W °C °C °C V V V V A A A A Features High frequency IGBT with guaranteed short circuit SOA capability. IGBT with anti-parallel diode in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies DC choppers Advantages Saves space (two devices in one package) Easy to mount (isolated mounting hole) Reduces assembly time and cost Operates cooler Easier to assemble
G E C
TO-247 AD
1.15/10 Nm/lb-in. 6 300 g °C
Symbol
Test Conditions
Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 1200 4 TJ = 25°C TJ = 125°C 8 V V
BVCES VGE(th) ICES
IC IC
= 4 mA, VGE = 0 V = 2.5 mA, VCE = VGE
VCE = 0.8 VCES , VGE= 0……
