器件名称: IXSH25N100
功能描述: Low VCE(sat) IGBT, High Speed IGBT
文件大小: 102.63KB 共6页
简 介:VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V
I C25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
Short Circuit SOA Capability
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight g
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 M Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 4.7 Clamped inductive load, L = 30 H V GE = 15 V, VCE = 0.6 V CES, TJ = 125°C RG = 33 , non repetitive T C = 25°C
Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A s
TO-247 AD (IXSH)
G
C
E
TO-204 AE (IXSM)
C
W °C °C °C
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 300 °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 1000 5 TJ = 25°C TJ = 125°C 8 250 1 ±100 25N100 25N100A 3.5 4.0 V V A mA nA V V
Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz
q q q q q q
BVCES VGE(th) I CES I GES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 2.5 mA, VCE = VGE
V CE = 0.8 VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC =……
