器件名称: IXSH20N60AU1
功能描述: Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
文件大小: 112.96KB 共6页
简 介:Not for new designs
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Mounting torque Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 M Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T J = 125° C, RG = 82 Clamped inductive load, L = 100 H VGE = 15 V, V CE = 360 V, TJ = 125°C RG = 82 , non repetitive TC = 25 °C Maximum Ratings 600 600 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A s W °C °C °C
VCES IXSH 20 N60U1 IXSH 20 N60AU1 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features International standard package JEDEC TO-247 AD High frequency IGBT with guaranteed Short Circuit SOA capability IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity
q q q q q q
1.13/10 Nm/lb.in. 6 300 g °C
Applications Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 25°C TJ = 125°C 6.5 500 8 ±100 20N60U1 20N60AU1 2.5 3.0 V V A mA nA V V
q q q q
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 1.75 mA, VGE = 0 V = 1.5 mA, VCE = VGE
q
AC motor speed contr……
