器件名称: IXSA10N60B2D1
功能描述: High Speed IGBT with Diode
文件大小: 589.11KB 共6页
简 介:High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
IXSA 10N60B2D1 IXSP 10N60B2D1
VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V
D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body t = 10s Md Weight Mounting torque (TO-220) TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 , non repetitive TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @ 0.8 VCES 10 100 -55 ... +150 150 -55 ... +150 300 250 V V V V A A A A A s W °C °C °C °C °C g Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast fall time for switching speeds up to 20 kHz Applications AC motor speed control Uninterruptible power supplies (UPS) Welding Advantages High power density
G C E C (TAB) G E C (TAB)
TO-263 (IXSA)
TO-220AB (IXSP)
G = Gate E = Emitter
C = Collector TAB = Collector
1.3/10 Nm/lb. in 2
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 7.0 75 200 ± 100 2.5 V A A nA V
VGE(th) ICES IGES VCE(sat)
IC
= 750 A, VCE = VGE
VCE = VCES VG……
