器件名称: IXLF19N250A
功能描述: High Voltage IGBT
文件大小: 68.32KB 共4页
简 介:IXLF 19N250A
High Voltage IGBT
in High Voltage ISOPLUS i4-PACTM
IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns
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1 1 2 2 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 ; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 H TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 2500 ± 20 32 19 70 1200 250 V V A A A V W Features High Voltage IGBT - substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off - substitute for electromechanical trigger and discharge relays ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline - UL registered E72873 Applications switched mode power supplies DC-DC converters resonant converters laser generators, x ray generators discharge circuits 5
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.2 4.7 5 0.2 500 100 50 600 250 15 30 2.28 103 43 142 3.9 8 0.15 V V V mA mA nA ns ns ns ns mJ mJ nF pF pF nC 0.5 K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies Coes Cres QGon RthJC
IC = 19 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
Inductive load, T……
