器件名称: IXKR40N60
功能描述: CoolMOS Power MOSFET in ISOPLUS247 Package
文件大小: 46.82KB 共2页
简 介:Advanced Technical Information
CoolMOS Power MOSFET
in ISOPLUS247TM Package
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base
VDSS IXKR 40N60C 600 V
ID25 38 A
RDS(on) 70 m
MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/s TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 H; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ±20 38 25 6 1.8 1 V V A A V/ns
ISOPLUS 247TM E153432
G
D
Isolated base*
G = Gate
D = Drain
S = Source
* Patent pending
Features
J mJ
q
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 70 m 3.5 60 5.5 V
q
ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO247AD compatible - Easy clip assembly fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density
RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC
VGS = 10 V; ID = ID90 VDS = 20 V; ID = 3 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 50 A 220 55 125 30 95 100 10 0.9
25 A A 100 nA nC nC nC ns ns ns ns 1.1 V
q
Appli……
