器件名称: IXKN45N80C
功能描述: CoolMOS Power MOSFET
文件大小: 52.65KB 共2页
简 介:Advanced Technical Information
CoolMOS Power MOSFET
IXKN 45N80C
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET
VDSS 800 V
ID25 44 A
RDS(on) 74 m
MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 17 A;diF/dt≤ 100 A/s TVJ = 150°C ID = 4 A; L = 80 mH; TC = 25°C ID = 17 A; L = 3 H; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings
miniBLOC, SOT-227 B E72873
S
800 ±20 44 30 6 670 0.5
V V A A V/ns
G
S D G = Gate S = Source D = Drain
mJ mJ
Either source terminal at miniBLOC can be used as main or kelvin source
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 63 2 20 74 m 4 V
Features
●
RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC
VGS = 10 V; ID = ID90 VDS = 20 V; ID = 4 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 640 V; ID = 70 A
miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density
50 A A 400 nA
●
332 36 168 25 15 75 10 1.0 1.2
nC nC nC ns ns ns ns V
●
VGS= 10 V; VDS = 640 V; ID = 70 A; RG = 1.8 (reverse conduction) IF = 37.5 A; VGS = 0 V
Applications
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