器件名称: IXKN40N60
功能描述: CoolMOS Power MOSFET
文件大小: 117.89KB 共2页
简 介:Advanced Technical Information
CoolMOS Power MOSFET
IXKN 40N60C
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET
VDSS 600 V
ID25 40 A
RDS(on) 70 mW
Symbol VDSS VGS ID25 ID90 EAR EAS dv/dt PD TJ TJM Tstg VISOL Md
Conditions TJ = 25°C to 150°C
Maximum Ratings 600 ±20 V V
miniBLOC, SOT-227 B E72873
S G
TC = 25°C TC = 90°C ID = 20 A, L = 5 H, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive VDS VDSS, IS = 47 A, diS/dt = 100 A/s, TJ = TJM TC = 25°C
40 27 1 1.8 6 290 -40 ... +150 150 -40 ... +150
A A mJ J
D S
V/ns W °C °C °C V~
G = Gate S = Source
D = Drain
Either source terminal at miniBLOC can be used as main or kelvin source
50/60 Hz, RMS IISOL 1 mA Mounting torque Terminal connetion torque (M4)
2500
Features
q
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.
miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly Fast CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density
q
MOSFET Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 TJ = 25°C TJ = 125°C 0.5 50 25 70 3.5 5.5 ±100 V
q
VDSS IDSS RDS(on) VGS(th) IGSS
VGS = 0 V, ID = 1 mA VDS = 0.8 VDSS VGS = 0 V VGS = 10 V……
