器件名称: IXKC40N60C
功能描述: CoolMOS Power MOSFET ISOPLUS220
文件大小: 57.6KB 共2页
简 介:ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), High Voltage,, MOSFET
IXKC 40N60C
VDSS = 600 V ID25 = 28 A RDS(on) = 96 m
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL VISOL FC Weight
Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 Package lead current limit Io Io = 10A, TC = 25°C = 20A
Maximum Ratings 600 ±20 28 19 45 690 1 250 -55 ... +150 150 -55 ... +125 V V A A A mJ mJ W °C °C °C °C V~
ISOPLUS 220TM
G D S Isolated back surface* G = Gate, S = Source * Patent pending D = Drain,
TC = 25°C
Features
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1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force
300 2500
11 ... 65 / 2.4 ...11 N/lb 3 g
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 2ND generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) Low thermal resistance due to reduced chip thickness Low drain to tab capacitance(<30pF)
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 230 3.5 TJ = 25°C TJ = 125°C 20 ±200 96 m m 5.5 2 V A A nA
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RDS(on) VGS(th) IDSS IGSS
VGS = 10 V, ID = ID90, Note 3 VGS = 10 V, ID = ID90, Note 3 TJ = 125°C VDS = VGS, ID = 2 mA VDS = VDSS VGS = 0 V VGS = ±20 VDC……
