器件名称: IXKC20N60C
功能描述: CoolMOS Power MOSFET in ISOPLUS220 Package
文件大小: 520.97KB 共2页
简 介:CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), Superjunction MOSFET Preliminary Data Sheet
VDSS = 600 V ID25 = 14 A RDS(on) = 190 m
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL VISOL FC Weight
Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 Package lead current limit Io Io = 10A, TC = 25°C = 20A
Maximum Ratings 600 ±20 14 10 45 690 1 125 -55 ... +150 150 -55 ... +125 V V A A A mJ mJ W °C °C °C °C V~
ISOPLUS 220LVTM E153432
G
D
S
Isolated back surface* D = Drain,
G = Gate, S = Source * Patent pending
TC = 25°C
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<30pF)
z
1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force
300 2500
11 ... 65 / 2.4 ...11 N/lb 3 g
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 160 463 3.5 TJ = 25°C TJ = 125°C 10 ±100 190 m m 5.5 1 V A A nA Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) z Power Factor Correction (PFC) z Welding z Inductive Heating
z z
RDS(on) ……
