器件名称: IXGX60N60B2D1
功能描述: HiPerFAST IGBT with Diode
文件大小: 622.97KB 共6页
简 介:Advance Technical Data
HiPerFAST TM IGBT with Diode
Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching
IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ)
= 600 V = 75 A < 1.8 V = 100 ns
Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Clamped inductive load @ VCE ≤ 600 V TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 60 300 ICM = 150 500 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-264 AA (IXGK)
(TAB) C E
G
PLUS247 (IXGX)
(TAB)
G = Gate E = Emitter
C = Collector Tab = Collector
W °C °C °C Features Square RBSOA High current handling capability MOS Gate turn-on for drive simplicity Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications Switch-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) DC choppers AC motor speed control DC servo and robot drives
Mounting torque, TO-264 TO-264 PLUS247
1.13/10 Nm/lb.in. 10 6 300 g g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125°C 5.0 300 5 ± 100 1.8 V A mA nA V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V N……
