器件名称: IXGT60N60
功能描述: Ultra-Low VCE(sat) IGBT
文件大小: 95.92KB 共4页
简 介:Ultra-Low VCE(sat) IGBT
IXGH 60N60 IXGK 60N60 IXGT 60N60
VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 75 60 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD (IXGH)
G
C E
TO-268 (IXGT)
G E (TAB)
TO-264 (IXGK) W °C °C °C °C g g g
G = Gate, E = Emitter,
G D S
D (TAB)
Mounting torque (M3)
1.13/10 Nm/lb.in. 300 6 10 4
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-264 TO-268
C = Collector, TAB = Collector
Features International standard package JEDEC TO-247 AD, TO-264, TO-268 New generation HDMOSTM process Low VCE(sat) for minimum on-state conduction losses High current handling capability MOS Gate turn-on drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Easy to mount with 1 screw (isolated mounting screw hole) Low losses, high efficiency High power density High power, surface mount package
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5 ……
