器件名称: IXGT30N60BU1
功能描述: HiPerFAST IGBT with Diode
文件大小: 141.09KB 共5页
简 介:HiPerFASTTM IGBT with Diode
Combi Pack
IXGH 30N60BU1 IXGT 30N60BU1
VCES IC25 VCE(sat) tfi
TO-268 (IXGT)
= 600 V = 60 A = 1.8 V = 100 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load, L = 100 H TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-268 TO-247 AD 4 6 V V V V A A A A
G = Gate, E = Emitter,
G E C (TAB)
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
W °C °C °C °C Nm/lb.in. g g Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) High power density Optimized VCE(sat) and switching speeds for medium frequency applications
97501E (02/02)
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600……