器件名称: IXGT24N170
功能描述: High Voltage IGBT
文件大小: 99.44KB 共2页
简 介:Advance Technical Data
High Voltage IGBT
IXGH 24N170 VCES IXGT 24N170 IC25 VCE(sat) tfi(typ)
= 1700 V = 50 A = 3.3 V = 290 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Clamped inductive load TC = 25°C
Maximum Ratings 1700 1700 ± 20 ± 30 50 24 150 ICM = 50 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
W °C °C °C °C °C
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G = Gate, E = Emitter,
Features
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Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
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International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 3.0 TJ = 25°C TJ = 125°C 5.0 50 500 ± 100 TJ = 25°C TJ = 125°C 2.5 3.0 3.3 V V A A nA V V
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BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
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