器件名称: IXGR32N60CD1
功能描述: HiPerFAST IGBT with Diode ISOPLUS247
文件大小: 127.01KB 共5页
简 介:HiPerFASTTM IGBT with Diode ISOPLUS247TM
(Electrically Isolated Backside)
IXGR 32N60CD1
VCES IC25
VCE(SAT)typ tfi(typ)
= 600 = 45 = 2.1 = 55
V A V ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 45 28 120 ICM = 64 @ 0.8 VCES 140 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A W °C °C °C °C V~ g
ISOPLUS 247TM (IXGR) E 153432
G
C
E
Isolated backside*
G = Gate, E = Emitter, * Patent pending
C = Collector, TAB = Collector
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS t = 1 min leads-to housing
Features DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ±100 2.1 2.5 V V mA mA nA V Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density Very fast switching speeds for high frequency applications
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
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