器件名称: IXGQ20N120BD1
功能描述: High Voltage IGBT with Diode
文件大小: 598.7KB 共6页
简 介:High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1
VCES IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
BD1
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 40 20 100 ICM = 40 @0.8 VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g
TO-3P (IXGQ)
G
C
E
(TAB)
G = Gate E = Emitter Features
z z
C = Collector TAB = Collector
Mounting torque
1.13/10 Nm/lb.in. 300 6
z
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight
z
International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 20N120B 20N120BD1 5.0 25 50 ± 100 TJ=125°C 2.9 2.8 3.4 V A A nA V V
Advantages
z
z
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
z
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2
Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost
2003 IXYS All rights reserved
DS99136(12/03)
IXGQ 20N120B IXGQ 20N12……
