器件名称: IXGP2N100A
功能描述: High Voltage IGBT
文件大小: 85.86KB 共2页
简 介:High Voltage IGBT
VCES
IC90 2.0 A 2.0 A
VCE(SAT) 2.7 V 3.5 V
IXGP 2N100 1000 V IXGP 2N100A 1000 V
Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) PC TJ TJM TSTG Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150W Clamped inductive load TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 4 2 8 I CM = 6 @ 0.8 VCES 25 -55 ... +150 150 -55 ... +150 4 300 W °C °C °C g °C V V V V A A A A
TO-220
1 2 3 2 = Collector 4 = Collector
4
1 = Gate 3 = Emitter
Features
Max. Lead Temperature for Soldering (1.6mm from case for 10s)
International Low V
CE(sat)
standard package
Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES VGE(th) I CES I GES VCE(sat) IC = 25A, VGE = 0 V IC = 25A, VCE = VGE VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V I C = IC90, VGE = 15 V IXGP2N100 IXGP2N100A TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 1000 2.5 5.0 10 200 + 50 2.7 3.5 V V A A nA V V
High current handling capability MOS Gate turn-on
- drive simplicity
- for low on-state conduction losses
Applications
Capacitor discharge Anode triggering of thyristors DC choppers Switched-mode and resonant-mode
power supplies.
2000 IXYS All rights reserved
95514C (9/00)
IXGP 2N100 IXGP 2N100A
Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 s, duty cycle < 2 % Cies Coes Cres Qg Qge Qgc td……
