器件名称: IXGP16N60C2D1
功能描述: HiPerFASTTM IGBT C2-Class High Speed IGBT
文件大小: 527.47KB 共2页
简 介:Advance Technical Information
HiPerFASTTM IGBT C2-Class High Speed IGBT
IXGA IXGP IXGA IXGP
16N60C2 16N60C2 16N60C2D1 16N60C2D1
VCES IC25 VCE(sat)
tfi(typ)
= 600 V = 40 A = 3.0 V = 35 ns
D1
Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 110°C TC = 110°C (IXG_16N60C2D1 diode) TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 Clamped inductive load TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 40 16 11 100 ICM = 32 @0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A A
G G C
TO-263 (IXGA)
C (TAB)
TO-220 (IXGP)
W °C °C °C Features
z z
C E
C (TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
Mounting torque
(M3.5 screw)
0.55/5 Nm/lb.in. 300 260 4 2 °C °C g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight TO-220 TO-263
z
Very high frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity
Applications
z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 16N60C2 16N60C2D1 5.0 25 50 ±100 3.0 TJ=125°C 2.1 V A A nA V V
z
z z z
VGE(th) ICES IGES VCE(sat)
IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 12 A, VGE = 15 V Note 2
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