器件名称: IXGN50N60B
功能描述: HiPerFASTTM IGBT
文件大小: 118.38KB 共4页
简 介:HiPerFASTTM IGBT
IXGN 50N60B
VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V
Preliminary data sheet
E
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
SOT-227B miniBLOC
Ex G
Ex C G = Gate, C = Collector, E = Emitter x Either emitter terminal can be used as Main or Kelvin Emitter
Features International standard package SOT-227B Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat) for minimum on-state conduction losses MOS Gate turn-on drive simplicity Low collector-to-case capacitance (< 50 pF) Low package inductance (< 5 nH) - easy to drive and to protect Applications
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 125°C 5 200 1 ±100 2.5 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
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