器件名称: IXGN200N60
功能描述: HiPerFAST IGBT
文件大小: 131.94KB 共4页
简 介:HiPerFASTTM IGBT
IXGN 200N60 IXGN 200N60A
VCES 600 V 600 V
IC25 200 A 200 A
VCE(sat) 2.5 V 2.7 V
E
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 200 100 300 ICM = 100 @ 0.8 VCES 600 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C V~ V~
SOT-227B, miniBLOC
E G
E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter
50/60 Hz IISOL 1 mA
t = 1 min t=1s
2500 3000
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features International standard package miniBLOC (ISOTOP compatible) Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Low collector-to-case capacitance (< 50 pF) Low package inductance (< 5 nH) - easy to drive and to protect
q q q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 6 200 2 ±400 200N60 200N60A 2.5 2.7 V V mA mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 10 mA, VCE = VGE
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE……
