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IXGM25N100A

器件名称: IXGM25N100A
功能描述: Low VCE(sat), High speed IGBT
文件大小: 106.55KB    共4页
生产厂商: IXYS
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简  介:VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125° C, RG = 33 Clamped inductive load, L = 100 H T C = 25°C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5 250 1 ±100 25N100 25N100A 3.5 4.0 V V A mA nA V V Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 250 A, VCE = VGE V CE = 0.8 VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power sup……
相关电子器件
器件名 功能描述 生产厂商
IXGM25N100A Low VCE(sat), High speed IGBT IXYS
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