器件名称: IXGH45N120
功能描述: IGBT
文件大小: 64.41KB 共2页
简 介:IGBT
High Voltage, Low VCE(sat)
Preliminary data sheet
IXGH 45N120 VCES IXGT 45N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 75 A = 2.5 V = 390 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 75 45 180 ICM = 90 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
W °C °C °C °C °C
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G = Gate, E = Emitter,
Features
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Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
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International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C V V A mA nA V
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BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 750 A, VCE = VGE
5 250 2 ± 100 2.5
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