器件名称: IXGH41N60
功能描述: Ultra-Low VCE(sat) IGBT
文件大小: 34.78KB 共2页
简 介:Ultra-Low VCE(sat) IGBT
IXGH 41N60
VCES = 600 V IC25 = 76 A VCE(sat) = 1.6 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 76 41 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD
G
C
E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features International standard package JEDEC TO-247 AD Newest generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Applications
Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5 200 1 ±100 1.6 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
AC motor speed control DC servo and robot drives DC choppers Solid state relays Lighting controls Temperature regulators
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages Easy to mount with 1 screw (isolated mounting screw hole) Low losses, high efficiency High power density
IXYS re……
