器件名称: IXGH38N60
功能描述: Ultra-Low VCE(sat) IGBT
文件大小: 45.63KB 共2页
简 介:Ultra-Low VCE(sat) IGBT
IXGH 38N60
VCES I C25 VCE(sat)
= 600 V = 76 A = 1.8 V
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Md Weight
Test Conditions TJ = 25°C to 150 °C TJ = 25°C to 150 °C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Clamped inductive load, L = 100 H TC = 25°C
Maximum Ratings 600 600 ±20 ±30 76 38 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features
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Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125° C 5 200 1 ±100 1.8 V V A mA nA V
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BV CES V GE(th) I CES I GES V CE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages
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Easy to mount with 1 screw (isolated mounting screw hole) Low ……
