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IXGH32N60A

器件名称: IXGH32N60A
功能描述: HiPerFAST IGBT
文件大小: 44.07KB    共2页
生产厂商: IXYS
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简  介:IXGH 32N60A IXGH 32N60AS VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.9 V 125 ns HiPerFASTTM IGBT TO-247 SMD (32N60AS) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; R GE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load, L = 100 H TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C Features q International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD q High current handling capability q 2nd generation HDMOSTM process q MOS Gate turn-on - drive simplicity Applications AC motor speed control q DC servo and robot drives q DC choppers q Uninterruptible power supplies (UPS) q Switched-mode and resonant-mode power supplies q G E C (TAB) TO-247 AD C (TAB) G C E C = Collector TAB = Collector G = Gate E = Emitter 1.13/10 Nm/lb.in. TO-247 AD TO-247 SMD 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C V V A mA nA V BV CES V GE(th) I CES I GES V CE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE 5 200 1 ±100 2.9 VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Advantages Space savings (two devic……
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