器件名称: IXGH32N50BU1S
功能描述: HiPerFAST IGBT with Diode Combi Pack
文件大小: 51.66KB 共2页
简 介:Preliminary Data Sheet
HiPerFASTTM IGBT with Diode Combi Pack
IXGH32N50BU1 IXGH32N50BU1S
VCES IC25 VCE(sat) tfi
TO-247 SMD (32N50BU1S)
= = = =
500 V 60 A 2.0 V 80 ns
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 M Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Clamped inductive load, L = 100 H TC = 25 °C
Maximum Ratings 500 500 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-247 SMD TO-247 AD 4 6 V V V V A A A A W °C °C °C °C Nm/lb.in. g g Features
l
G E
C (TAB)
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD
l
l l l
International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 2.0 V V A mA nA V
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BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 750A, VGE = 0 V = 250 A, VCE = VGE
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