器件名称: IXGH31N60U1
功能描述: Ultra-Low VCE(sat) IGBT with Diode
文件大小: 46.44KB 共2页
简 介:Ultra-Low VCE(sat) IGBT with Diode
IXGH 31N60U1
VCES IC25 VCE(sat)
= 600 V = 40 A = 1.8 V
Combi Pack
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 M Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 10 Clamped inductive load, L = 100 H TC = 25 °C
Maximum Ratings 600 600 ±20 ±30 40 31 80 ICM = 62 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features
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Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g °C
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 1.8 V V A mA nA V
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BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 750 A, VGE = 0 V = 250 A, VCE = VGE
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Advantages
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VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±……
