器件名称: IXGH30N30
功能描述: HiPerFAST IGBT
文件大小: 75.11KB 共4页
简 介:HiPerFASTTM IGBT
IXGH30N30
VCES IC25 VCE(sat) tfi
= = = =
300 V 60 A 1.6 V 180 ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W ICM = 60 Clamped inductive load, L = 100 mH @ 0.8 VCES TC = 25°C
Maximum Ratings 300 300 ±20 ±30 60 30 120 A 200 -55 ... +150 150 -55 ... +150 300 260 1.13/10 TO-247 AD 6 W °C °C °C °C °C Nm/lb.in. g V V V V A A A
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features
International standard package
JEDEC TO-247 AD
High current handling capability Newest generation HDMOSTM
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
process
MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2.5 5 200 1 ±100 nA 1.6 V V V mA mA
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE TJ = 25°C TJ = 125°C
Advantages
High power density Suitable for surface mounting Switching speed for high frequency
VCE = 0.8 VCES VGE = 0 V……
