器件名称: HL6501MG
功能描述: Visible High Power Laser Diode
文件大小: 93.83KB 共4页
简 介:HL6501MG
Visible High Power Laser Diode
Description
The HL6501MG is a 0.65 m band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types of optical equipment. Hermetic sealing of the small package (φ5.6 mm) assures high reliability. ODE-208-040A (Z) Rev.1 Dec. 13, 2006
Features
High output power: 35 mW (CW) Visible light output: λp = 658 nm Typ Small package: φ 5.6 mm Low astigmatism: 6 m Typ (PO = 5 mW) Single longitudinal mode
Package Type HL6501MG: MG
Internal Circuit
1 3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Optical output power PO Pulse optical output power PO(pulse) LD reverse voltage VR(LD) PD reverse voltage VR(PD) Operating temperature Topr Storage temperature Tstg Note: Pulse condition : Pulse width = 100 ns , duty = 50% Ratings 35 50 * 2 30 –10 to +60 –40 to +85 Unit mW mW V V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Threshold current Operating voltage Slope efficiency Beam divergence parallel to the junction Beam divergence perpendicular to the junction Astigmatism Lasing wavelength Monitor current Symbol Ith VOP ηs θ// θ⊥ AS λp IS Min 30 2.1 0.5 7 18 — 645 0.05 Typ 45 2.6 0.75 8.5 22 6 658 0.2 Max 70 3.0 1.0 10.5 26 — 665 1.5 Unit mA V mW/mA ° ° m nm mA Test Conditions — PO = 30 mW 18 (mW) / (I(24mW) – I(6mW)) PO = 30 mW PO = 30 mW PO = 5 mW, NA = 0.55 PO = 30 mW PO = 30 mW, VR(PD) = 5 V
Rev.1 Dec. 1……
