EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > OPNEXT > HL6320G

HL6320G

器件名称: HL6320G
功能描述: AlGaInP Laser Diodes
文件大小: 94.66KB    共4页
生产厂商: OPNEXT
下  载:    在线浏览   点击下载
简  介:HL6319G/20G AlGaInP Laser Diodes Description The HL6319G/20G are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement. ODE-208-027 (Z) Rev.0 Jul. 01, 2005 Features Visible light output: 635 nm Typ Single longitudinal mode Optical output power: 10 mW CW Low operating current: 95 mA Max Low operating voltage: 2.7 V Max TM mode oscillation Package Type HL6319G/20G: G2 Internal Circuit HL6319G 1 3 Internal Circuit HL6320G 1 3 PD LD PD LD 2 2 Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO VR(LD) VR(PD) Topr Tstg Ratings 10 2 30 –10 to +50 –40 to +85 Unit mW V V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Threshold current Operating current Operating voltage Slope efficiency Beam divergence parallel to the junction Beam divergence perpendicular to the junction Astigmatism Lasing wavelength Monitor current Symbol Ith IOP VOP ηs θ// θ⊥ AS λp IS Min 20 — — 0.3 5 25 — 625 0.05 Typ 50 70 — 0.5 8 31 5 635 0.17 Max 75 95 2.7 0.7 11 37 — 640 0.30 Unit mA mA V mW/mA ° ° m nm mA Test Conditions — PO = 10 mW PO = 10 mW 6 (mW) / (I(8mW) – I(2mW)) PO = 10 mW PO = 10 mW PO = 10 mW, NA = 0.55 PO = 10 mW PO = 10 mW, VR(PD) = 5 V Rev.0 Jul. 01, 2005 page 1 of 4 HL6319G/20G Typical Characteristic Curves Optical Output Power vs. Foward Curre……
相关电子器件
器件名 功能描述 生产厂商
HL6320G AlGaInP Laser Diodes OPNEXT
HL6320G AlGaInP Laser Diodes HITACHI
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2