器件名称: HL6316G
功能描述: AlGaInP Laser Diodes
文件大小: 93.04KB 共4页
简 介:HL6316G
AlGaInP Laser Diodes
Description
The HL6316G is a 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser pointers and optical equipment. ODE-208-026 (Z) Rev.0 Jul. 01, 2005
Features
Visible light output: 635 nm Typ Single longitudinal mode Optical output power: 3 mW CW Low operating current: 30 mA Typ Low operating voltage: 2.7 V Max TM mode oscillation
Package Type HL6316G: G2
Internal Circuit
1 3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Symbol PO PO(pulse) VR(LD) VR(PD) Topr Ratings 3 5* 2 30 –10 to +50 –40 to +85 Unit mW mW V V °C °C
Storage temperature Tstg Note: Pulse condition : Pulse width ≤ 1 s , duty ≤ 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item Threshold current Operating current Operating voltage Beam divergence parallel to the junction Beam divergence perpendicular to the junction Lasing wavelength Monitor current Symbol Ith IOP VOP θ// θ⊥ λp IS Min — — — 6 23 630 0.1 Typ 25 30 — 8 30 635 0.3 Max 35 42 2.7 10 39 640 0.6 Unit mA mA V ° ° nm mA Test Conditions — PO = 3 mW PO = 3 mW PO = 3 mW PO = 3 mW PO = 3 mW PO = 3 mW, VR(PD) = 5 V
Rev.0 Jul 01, 2005 page 1 of 4
HL6316G
Typical Characteristic Curves
Optical Output Power vs. Forward Current 3 TC = -10°C TC = 25°C 2 TC = 50°C Threshold Current vs. Case Temperature 100 Threshold current, Ith (mA)……
