器件名称: HE8811
功能描述: GaAlAs Infrared Emitting Diode
文件大小: 186.74KB 共6页
简 介:HE8811
GaAlAs Infrared Emitting Diode
ODE-208-999B (Z) Rev.2 Mar. 2005 Description
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment.
Features
High-frequency response High efficiency and high output power Broad radiation pattern
Package Type HE8811: SG1 Internal Circuit
1
2
HE8811
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 200 3 –20 to +60 –40 to +90 Unit mA V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp λ VF IR Ct tr tf Min 20 780 — — — — — — Typ 30 820 50 — — 10 5 7 Max — 900 — 2.5 100 — — — Unit mW nm nm V A pF ns ns Test Conditions IF = 150 mA IF = 150 mA IF = 150 mA IF = 150 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA
Rev.2, Mar. 2005, page 2 of 6
HE8811
Typical Characteristic Curves
Optical Output Power vs. Forward Current 40
Optical output power, PO (mW) Forward current, IF (mA)
Forward Current vs. Forward Voltage 200
2 0
30
T
°C
C
25
=
°C
60 °C
150 TC = 0°C 100 25°C 20°C 50
20
10
0 50 100 150 Forward current, IF (mA) 200
0 0 2.5 0.5 1.0 1.5 2.0 Forward voltage, VF (V) 3.0
Spectral Distribution ……
