器件名称: HE8807SG
功能描述: GaAlAs Infrared Emitting Diodes
文件大小: 102.25KB 共5页
简 介:HE8807SG/FL
GaAlAs Infrared Emitting Diodes
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. ODE-208-050 (Z) Rev.0 Oct. 30, 2006
Features
High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability
Package Type HE8807SG: SG1
Package Type HE8807FL: FL
Internal Circuit
1
2
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature IF VR Topr Tstg Symbol Ratings 200 3 –20 to +85 –40 to +100 Unit mA V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time HE8807SG HE8807FL Symbol PO Pf * λp λ VF IR Ct tr tf Min 10 0.5 800 — — — — — — Typ 20 1.0 880 30 1.7 — 10 20 20 Max — — 900 60 2.3 100 — — — Unit mW nm nm V A pF ns ns Test Conditions IF = 150 mA IF = 20 mA IF = 150 mA IF = 150 mA IF = 150 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA
Note: Pf specification: The optical output within 9 degrees of the acceptance angle.
Rev.0 Oct. 30, 2006 page 1 of 5
HE8807SG/FL
Typical Characteristic Curves
Optical Output Power vs. Forward Current (HE8807SG) 25 Forward Current vs. Forward Voltage 200
Optical output power, PO (mW)
0° C
20 15 10 5 0
C 0° 5°C °C 2 40 C 6 0° 80°C
Forward current, IF (mA)
TC = 60°C 150 25°C -20°C 100
……
