器件名称: HE8404SG
功能描述: GaAlAs Infrared Emitting Diode
文件大小: 186.78KB 共6页
简 介:HE8404SG
GaAlAs Infrared Emitting Diode
ODE-208-997B (Z) Rev.2 Mar. 2005 Description
The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
High efficiency and high output power
Package Type HE8404SG: SG1 Internal Circuit
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2
HE8404SG
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp λ VF IR Ct tr tf Min 40 790 — — — — — — Typ — 820 50 — — 30 10 10 Max — 850 60 2.5 100 — — — Unit mW nm nm V A pF ns ns Test Conditions IF = 200 mA IF = 200 mA IF = 200 mA IF = 200 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA
Rev.2, Mar. 2005, page 2 of 6
HE8404SG
Typical Characteristic Curves
Optical Output Power vs. Forward Current 60
Optical output power, PO (mW) Forward current, IF (mA)
Forward Current vs. Forward Voltage 250 200 150 TC = 20°C 100 50 0 25°C 60°C
50 40 30 20 10 0 0 50 100 150 200 250 Forward current, IF (mA) TC = 20°C 0°C 25°C 40°C 60°C
0
0.5
1.0
1.5
2.0
2.5
Forward voltage, VF (V)
Wavelength Distribution
Relative radiation intensity (%)
Pulse Response Current pulse TC = 25°C
Relative ……
