器件名称: LP601
功能描述: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style AP
文件大小: 56.7KB 共2页
简 介:polyfet rf devices
LP601
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.60 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
4.0 A
RF CHARACTERISTICS (
SYMBOL PARAMETER Gps Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 35 TYP
7.0 WATTS OUTPUT )
MAX UNITS TEST CONDITIONS dB % 10;1 Relative Idq = 0.40 A, Vds = Idq = 0.40 A, Vds =
28.0 V, F =1,500 MHz 28.0 V, F =1,500 MHz
η
VSWR
Idq = 0.40 A, Vds = 28.0 V, F =1,500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common So……
