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KM44L32031BT-G(L)Z

器件名称: KM44L32031BT-G(L)Z
功能描述: DDR SDRAM Specification Version 1.0
文件大小: 669.27KB    共53页
生产厂商: SAMSUNG
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简  介:128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence. 2. In power down mode timing diagram, NOP condition is added to precharge power down exit. Version 0.3(Dec,1998) - Added QFC Function. - Added DC current value - Reduce I/O capacitance values Version 0.4(Feb,1999) -Added DDR SDRAM history for reference(refer to the following page) -Added low power version DC spec Version 0.5(Apr,1999) -Revised following first showing for JEDEC standard -Added DC target current based on new DC test condition Version 0.6(July 1,1999) 1.Modified binning policy From To -Z (133Mhz) -Z (133Mhz/266Mbps@CL=2) -8 (125Mhz) -Y (133Mhz/266Mbps@CL=2.5) -0 (100Mhz) -0 (100Mhz/200Mbps@CL=2) 2.Modified the following AC spec values From. -Z tAC tDQSCK tDQSQ tDS/tDH tCDLR*1 tPRE*1 tRPST*1 tHZQ*1 *1 To. -0 +/- 1ns +/- 1ns +/- 0.75ns 0.75 ns 2.5tCK-tDQSS 1tCK +/- 1ns tCK/2 +/- 1ns tCK/2 +/- 1ns -Z +/- 0.75ns +/- 0.75ns +/- 0.5ns 0.5 ns 1tCK 0.9/1.1 tCK 0.4/0.6 tCK +/- 0.75ns -Y +/- 0.75ns +/- 0.75ns +/- 0.5ns 0.5 ns 1tCK 0.9/1.1 tCK 0.4/0.6 tCK +/- 0.75ns -0 +/- 0.8ns +/- 0.8ns +/- 0.6ns 0.6 ns 1tCK 0.9/1.1 tCK 0.4/0.6 tCK +/-0.8ns +/- 0.75ns +/- 0.75ns +/- 0.5ns 0.5 ns 2.5tCK-tDQSS 1tCK +/- 0.75ns tCK/2 +/- 0.75n……
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器件名 功能描述 生产厂商
KM44L32031BT-G(L)Z DDR SDRAM Specification Version 1.0 SAMSUNG
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