器件名称: H3055LJ
功能描述: N-Channel Enhancement-Mode MOSFET (20V, 13A)
文件大小: 45.63KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4
H3055LJ
N-Channel Enhancement-Mode MOSFET (20V, 13A)
H3055LJ Pin Assignment
Tab
1
2
3
3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
D
Internal Schematic Diagram
G S
Features
RDS(on)=45m@VGS=2.5V, ID=5.2A; RDS(on)=35m@VGS=4.5V, ID=6A High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability Fully Characterized Avalanche Voltage and Current Ideal for Li ion Battery Pack Applications
Applications
Battery Protection Load Switch Power Management
Absolute Maximum Ratings (T =25 C, unless otherwise noted)
o A
Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed)
*1
Parameter
Ratings 20 ±12 13 30
Units V V A A W W °C °C/W
Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75oC Operating and Storage Temperature Range Thermal Resistance Junction to Ambient
*2
o
2 1.3 -55 to +150 62.5
*1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board
H3055LJ
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless ……
