器件名称: H2N7002
功能描述: N-CHANNEL TRANSISTOR
文件大小: 65.17KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6823 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/4
H2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
SOT-23
Absolute Maximum Ratings
Drain-Source Voltage............................................................................................................. 60 V Drain-Gate Voltage (RGS=1M) ........................................................................................... 60 V Gate-Source Voltage ........................................................................................................ +/-40 V Continuous Drain Current (Ta=25°C)(1) ........................................................................... 200 mA Continuous Drain Current (Ta=100°C)(1) ......................................................................... 115 mA Pulsed Drain Current (Ta=25°C)(2)................................................................................... 800 mA Total Power Dissipation (Tc=25°C) .................................................................................. 200 mW Derate above 25°C ................................................................................................... 0.16 Mw / °C Storage Temperature ............................................................................................... -55 to 150 °C Operating Junction Temperature ............................................................................. -55 to……
