器件名称: H2N7000
功能描述: N-CHANNEL ENHANCEMENT MODE TRANSISTOR
文件大小: 41.29KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 1/4
H2N7000
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Description
The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW Maximum Voltages and Currents (Ta=25°C) BVDSS Drain to Source Voltage......................................................................................... 60 V BVGSS Gate to Source Voltage ......................................................................................... 40 V ID Drain Current............................................................................................................. 200 mA
Characteristics (Ta=25°C)
Symbol VDSS IDSS ±IGSS VGS(th) ID(on) RDS(on) VDSS(on)1 VDSS(on)2 Min. 60 0.8 75 Max. 1 ±10 3 5 2.5 0.4 Unit V uA nA V mA V v Test Conditions ID=10uA, VGS=0 VDS=48V VGS=±15V VDS=3V, ID=1mA VGS=4.5V, VDS=10V VGS=10V, ID=0.5A VGS=10V, ID=0.5A VGS=4.5V, ID=75mA
H2N7000
HSMC Product Specif……
